Woojin Park,Yonghun Kim,Ukjin Jung, Jin Ho Yang, Chunhum Cho, Yun Ji Kim, Syed Mohammad Najib Hasan, Hyun Gu Kim, Han Bo Ram Lee, Byoung Hun Lee
Advanced electronic materials.
DOI : http://dx.doi.org/10.1002/aelm.201500278
Abstract
High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field-effect transistors (FETs). Unipolar behavior and reduced contact resistance are achieved for tungsten disulfide (WS2) FETs by using a TiO2 interfacial layer inserted between a metal layer and a WS2 layer.
