Degradation of Deposition Blocking Layer during Area Selective Plasma Enhanced Atomic Layer Deposition of Cobalt, Han-Bo-Ram Lee, Woo-Hee Kim, Jeong Won Lee, Jaemin Kim, Inchan Hwang, and Hyungjun Kim, Journal of Korean Physical Society, 2010
http://dx.doi.org/10.3938/jkps.56.104
Abstract
The effects of plasma on the degradation of the deposition blocking layer during area-selective atomic layer deposition were investigated. Co atomic layer deposition (ALD) processes were de- veloped by using Co(iPr-AMD)2 (bis(N,N’-diisopropylacetamidinato)cobalt(II)) as a precursor, and two different reactants, NH3 gas for thermal ALD (TH-ALD) and NH3 plasma for plasma-enhanced ALD (PE-ALD). TH- and PE-ALD were applied to area selective ALD (AS-ALD) by using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a blocking layer. Both ALD processes produced pure Co films with resistivities as low as 50 µΩcm. For PE-ALD, however, no selective deposition was achieved due to a degradation of the OTS hydrophobicity caused by the NH3 plasma exposure. The effects of the plasma on the blocking efficiency of SAM were studied.
